Technical parameters/frequency: 4500 MHz
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 9 dB
Technical parameters/minimum current amplification factor (hFE): 70 @7mA, 3V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/height: 0.9 mm
External dimensions/packaging: SC-70-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Renesas Electronics | 功能相似 | SOT-363 |
Rf Small Signal Transistor Bipolar/Hbt
|
||
UPA810T-A
|
California Eastern Laboratories | 类似代替 | SC-70-6 |
射频(RF)双极晶体管 NPN High Frequency
|
||
UPA810T-A
|
Silicon Strorage Technology | 类似代替 | SO-6 |
射频(RF)双极晶体管 NPN High Frequency
|
||
UPA810T-T1
|
NEC | 功能相似 | SOT-323-6 |
Trans RF BJT NPN 12V 0.1A 6Pin SOT-363 T/R
|
||
UPA810T-T1
|
Renesas Electronics | 功能相似 | SOT |
Trans RF BJT NPN 12V 0.1A 6Pin SOT-363 T/R
|
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