Technical parameters/drain source resistance: 37.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): -6.00 A to 6.00 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOP
External dimensions/packaging: SOP
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review