Technical parameters/drain source resistance: 82.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -3.00 A to 3.00 A
Encapsulation parameters/Encapsulation: WSOF
External dimensions/packaging: WSOF
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review