Technical parameters/drain source voltage (Vds): 30 V
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Features: Power MOSFET
Other/leakage source voltage: 30V
Other/Gate Source Voltage: 20V
Other/continuous leakage current: 55A
Other/Storage Temperature: -55℃~+150℃
Other/Packaging: TO-252/DFN-8(5×6)
Compliant with standards/RoHS standards: RoHS Compliant
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