Technical parameters/rated voltage (DC): 650 V
Technical parameters/rated current: 20.0 A
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 20A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPP11N80C3
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPP11N80C3 功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review