Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 15.0 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 175 W
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/rated power (Max): 175 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 175000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/length: 39.5 mm
External dimensions/width: 26.2 mm
External dimensions/height: 8.7 mm
External dimensions/packaging: TO-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUX48
|
Central Semiconductor | 功能相似 | TO-204 |
t-Npn Si- Hiv Sw ; Rohs Compliant: Yes
|
||
BUX48
|
Comset Semiconductors | 功能相似 |
t-Npn Si- Hiv Sw ; Rohs Compliant: Yes
|
|||
BUX48
|
ST Microelectronics | 功能相似 | TO-3 |
t-Npn Si- Hiv Sw ; Rohs Compliant: Yes
|
||
|
|
Semelab | 功能相似 | TO-3 |
BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE.
|
||
BUX48-QR-B
|
TT Electronics | 功能相似 | TO-3 |
BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE.
|
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