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Model V20200C-E3/4W
Description Dual high voltage Trench MOS barrier Schottky rectifier with ultra-low VF=0.60 V IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A
Product QR code
Brand: Vishay Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
2.76  yuan 2.76yuan
5+:
$ 3.7274
25+:
$ 3.4513
50+:
$ 3.2580
100+:
$ 3.1752
500+:
$ 3.1199
2500+:
$ 3.0509
5000+:
$ 3.0233
10000+:
$ 2.9819
Quantity
5+
25+
50+
100+
500+
Price
$3.7274
$3.4513
$3.2580
$3.1752
$3.1199
Price $ 3.7274 $ 3.4513 $ 3.2580 $ 3.1752 $ 3.1199
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5552) Minimum order quantity(5)
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Technical parameters/forward voltage: 1.6V @10A

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -40℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VI20200C-E3/4W VI20200C-E3/4W Vishay Semiconductor 类似代替 TO-262-3
双高压Trench MOS势垒肖特基整流器超低VF = 0.60 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A
PDF
VI20200C-E3/4W VI20200C-E3/4W VISHAY 类似代替 TO-262
双高压Trench MOS势垒肖特基整流器超低VF = 0.60 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

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