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Technical parameters/forward voltage: 730mV @20A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBR20100CT-E3/4W
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Vishay Semiconductor | 类似代替 | TO-220-3 |
TMBS - Trench MOS 势垒肖特基整流器,高达 20A,Vishay Semiconductor Vishay 的 Trench MOS 势垒肖特基 (TMBS) 整流器系列包含专利 Trench 结构。 与平面肖特基整流器相比,TMBS 整流器可提供多个优势。 工作电压为 45V 及更高时平面肖特基整流器就失去了其快速转换速度的优势,且低正向压降到极度程度。 专利型 TMBS 结构通过少量缩减向漂移区域的载体注入来解决这些问题,从而最大程度减少积累电荷并提高转换速度。 ### 特点 专利 Trench 结构 提高交流/直流开关模式电源和直流/直流转换器的效率 高功率密度和低正向电压 ### 肖特基整流器,Vishay Semiconductor
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V40100C-E3/4W
|
VISHAY | 完全替代 | TO-220-3 |
双高压Trench MOS势垒肖特基整流器 Dual High-Voltage Trench MOS barrier Schottky Rectifier
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V40100C-M3/4W
|
VISHAY | 完全替代 | TO-220-3 |
Diode Schottky 100V 40A 3Pin(3+Tab) TO-220AB Tube
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|---|---|---|
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