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Model V40100CHM3/4W
Description Schottky diode and rectifier RECOMMENDED ALT 78-V40PW10CHM3/I
Product QR code
Brand: Vishay Semiconductor
Packaging TO-220-3
Delivery time
Packaging method
Standard packaging quantity 1
10.17  yuan 10.17yuan
5+:
$ 11.9012
50+:
$ 11.3926
200+:
$ 11.1078
500+:
$ 11.0366
1000+:
$ 10.9654
2500+:
$ 10.8840
5000+:
$ 10.8332
7500+:
$ 10.7823
Quantity
5+
50+
200+
500+
1000+
Price
$11.9012
$11.3926
$11.1078
$11.0366
$10.9654
Price $ 11.9012 $ 11.3926 $ 11.1078 $ 11.0366 $ 10.9654
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4861) Minimum order quantity(5)
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Technical parameters/forward voltage: 730mV @20A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MBR20100CT-E3/4W MBR20100CT-E3/4W Vishay Semiconductor 类似代替 TO-220-3
TMBS - Trench MOS 势垒肖特基整流器，高达 20A，Vishay Semiconductor Vishay 的 Trench MOS 势垒肖特基 (TMBS) 整流器系列包含专利 Trench 结构。 与平面肖特基整流器相比，TMBS 整流器可提供多个优势。 工作电压为 45V 及更高时平面肖特基整流器就失去了其快速转换速度的优势，且低正向压降到极度程度。 专利型 TMBS 结构通过少量缩减向漂移区域的载体注入来解决这些问题，从而最大程度减少积累电荷并提高转换速度。 ### 特点 专利 Trench 结构 提高交流/直流开关模式电源和直流/直流转换器的效率 高功率密度和低正向电压 ### 肖特基整流器，Vishay Semiconductor
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V40100C-E3/4W V40100C-E3/4W VISHAY 完全替代 TO-220-3
双高压Trench MOS势垒肖特基整流器 Dual High-Voltage Trench MOS barrier Schottky Rectifier
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V40100C-M3/4W V40100C-M3/4W VISHAY 完全替代 TO-220-3
Diode Schottky 100V 40A 3Pin(3+Tab) TO-220AB Tube
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