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Model VB20120C-E3/8W
Description Dual High Voltage Trench MOS Barrier Schottky Rectifiers
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.23  yuan 7.23yuan
10+:
$ 8.6748
100+:
$ 8.2411
500+:
$ 7.9519
1000+:
$ 7.9374
2000+:
$ 7.8796
5000+:
$ 7.8073
7500+:
$ 7.7495
10000+:
$ 7.7206
Quantity
10+
100+
500+
1000+
2000+
Price
$8.6748
$8.2411
$7.9519
$7.9374
$7.8796
Price $ 8.6748 $ 8.2411 $ 7.9519 $ 7.9374 $ 7.8796
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5608) Minimum order quantity(10)
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Technical parameters/forward voltage: 900mV @10A

Technical parameters/forward current: 20 A

Technical parameters/Maximum forward surge current (Ifsm): 120 A

Technical parameters/forward voltage (Max): 900mV @10A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 40 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.45 mm

External dimensions/width: 9.14 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: 40℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VB20120C-E3/4W VB20120C-E3/4W VISHAY 类似代替 TO-263
双高压Trench MOS势垒肖特基整流器超低VF = 0.54 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
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