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Model VBT2060C-E3/8W
Description Dual High Voltage Trench MOS Barrier Schottky Rectifiers
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method
Standard packaging quantity 1
3.95  yuan 3.95yuan
5+:
$ 5.3352
25+:
$ 4.9400
50+:
$ 4.6634
100+:
$ 4.5448
500+:
$ 4.4658
2500+:
$ 4.3670
5000+:
$ 4.3274
10000+:
$ 4.2682
Quantity
5+
25+
50+
100+
500+
Price
$5.3352
$4.9400
$4.6634
$4.5448
$4.4658
Price $ 5.3352 $ 4.9400 $ 4.6634 $ 4.5448 $ 4.4658
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8353) Minimum order quantity(5)
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Technical parameters/forward voltage: 650mV @10A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VBT2060C-E3/4W VBT2060C-E3/4W Vishay Semiconductor 完全替代 TO-263-3
双高压Trench MOS势垒肖特基整流器 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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