Technical parameters/forward voltage: 950mV @30A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VBT3080S-E3/8W
|
Vishay Semiconductor | 完全替代 | TO-263-3 |
Trench MOS势垒肖特基整流器 Trench MOS Barrier Schottky Rectifier
|
||
VBT3080S-E3/8W
|
Vishay Intertechnology | 完全替代 | TO-263 |
Trench MOS势垒肖特基整流器 Trench MOS Barrier Schottky Rectifier
|
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