Technical parameters/dissipated power: 192 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/rated power (Max): 192 W
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 192W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB20NM60T4
|
ST Microelectronics | 类似代替 | TO-263-3 |
N沟道600V - 仅为0.25mΩ - 20A TO- 220 / FP / D2PAK / I2PAK的MDmesh功率MOSFET ? N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET
|
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