Technical parameters/number of channels: 1
Technical parameters/dissipated power: 79 W
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Input capacitance (Ciss): 6420pF @100V(Vds)
Technical parameters/rated power (Max): 79 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 79W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/length: 15.7 mm
External dimensions/width: 5.7 mm
External dimensions/height: 26.7 mm
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STFW60N65M5
|
ST Microelectronics | 类似代替 | TO-3-3 |
STMICROELECTRONICS STFW60N65M5 功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.049 ohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review