Technical parameters/forward voltage: 900mV @10A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
F2012
|
Vishay Semiconductor | 功能相似 | TO-220 |
DIODE 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode
|
||
VF20120C-E3/4W
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
双高压Trench MOS势垒肖特基整流器超低VF = 0.54 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
|
||
VF20120C-E3/4W
|
VISHAY | 完全替代 | TO-220-3 |
双高压Trench MOS势垒肖特基整流器超低VF = 0.54 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
|
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