Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/minimum current amplification factor (hFE): 120 @100mA, 1V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSA643-Y
|
Fairchild | 功能相似 | TO-92 |
PNP Epitaxial Silicon Transistor, 2000-FNFLD
|
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