Technical parameters/drain source resistance: 4.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): 90 V
Technical parameters/leakage source breakdown voltage: 90.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 400 mA
Technical parameters/Input capacitance (Ciss): 60pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: DIP-14
External dimensions/packaging: DIP-14
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7334
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Semelab | 功能相似 |
Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB,
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2N7334
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB,
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Vishay Semiconductor | 类似代替 |
MOSFET 4N-CH 90V 0.4A 14DIP
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Vishay Intertechnology | 类似代替 |
MOSFET 4N-CH 90V 0.4A 14DIP
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