Technical parameters/forward voltage: 1.3 V
Technical parameters/thermal resistance: 1.1℃/W (RθJC)
Technical parameters/forward current: 40 A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/working junction temperature (Max): 200 ℃
Encapsulation parameters/Encapsulation: DO-203AB
External dimensions/height: 36.9 mm
External dimensions/packaging: DO-203AB
Physical parameters/operating temperature: -65℃ ~ 200℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | DO-5 |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
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GeneSiC Semiconductor | 功能相似 | DO-203AB |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
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International Semiconductor | 功能相似 |
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International Rectifier | 功能相似 | DO-5 |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
|
||
1N1183A
|
Vishay Semiconductor | 功能相似 | DO-203AB |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
|
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|
NJS | 功能相似 |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
|
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