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Model ZXMN10A08E6
Description DIODES INC. ZXMN10A08E6 MOSFET Transistor, N Channel, 1.5A, 100V, 400mohm, 10V, 2V
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Brand: Vishay Semiconductor
Packaging SOT-23
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9159) Minimum order quantity(1)
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Technical parameters/drain source resistance: 0.4 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.7 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 1.50 A

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/packaging: SOT-23

Other/Product Lifecycle: Active

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
ZXMN6A08E6 ZXMN6A08E6 Zetex 类似代替 SOT-23-6
DIODES INC. ZXMN6A08E6 晶体管, MOSFET, N沟道, 3 A, 60 V, 100 mohm, 10 V, 1 V

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