Technical parameters/drain source resistance: 105 mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 1.15 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Encapsulation parameters/Encapsulation: SOT-163
External dimensions/packaging: SOT-163
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSL308CH6327
|
Infineon | 功能相似 | TSOP |
30/30V,80/57mΩ,-2/2.3A,P/N沟道互补型MOSFET
|
||
BSL316CL6327
|
Infineon | 功能相似 | TSOP |
30V/1.4A,-30V/-1.5A,N/P沟道组合功率MOSFET
|
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