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Model JANSR2N7382
Description Radiation resistant power MOSFET through hole (TO-257AA) Radiation resistant power MOSFET THRU HOLE (TO-257AA)
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Brand: IRF
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8825) Minimum order quantity(1)
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Encapsulation parameters/installation method: Through Hole

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
JANSR2N7382 JANSR2N7382 Microsemi 类似代替 TO-257
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
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JANSR2N7382 JANSR2N7382 IRF 类似代替
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

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