Technical parameters/drain source resistance: 55.0 mΩ
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 2.40 W
Technical parameters/drain source voltage (Vds): 60.0 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 4.50 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
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