Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 5200pF @25V(Vds)
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 694000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-264
External dimensions/packaging: TO-264
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
APT44F80L
|
Microchip | 功能相似 |
N沟道FREDFET N-Channel FREDFET
|
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APT8024LFLL
|
APT | 完全替代 |
功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
|||
APT8024LFLL
|
Microsemi | 完全替代 | TO-264 |
功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
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