Technical parameters/rated current: 50.0 mA
Technical parameters/breakdown voltage: -50.0 V
Technical parameters/polarity: N-Channel
Technical parameters/breakdown voltage of gate source: -50.0 V
Technical parameters/Continuous drain current (Ids): 7.00 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TO-71
External dimensions/packaging: TO-71
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5197
|
Intersil | 功能相似 | TO-71 |
N沟道JFET N-CHANNEL JFET
|
||
2N5197
|
InterFET | 功能相似 | TO-71-3 |
N沟道JFET N-CHANNEL JFET
|
||
2N5199
|
Intersil | 功能相似 |
N沟道JFET N-CHANNEL JFET
|
|||
SI4834DY
|
Vishay Semiconductor | 功能相似 | SO |
Dual N-Channel 30V (D-S) MOSFET with Schottky Diode
|
||
SI4834DY
|
Vishay Siliconix | 功能相似 | SO |
Dual N-Channel 30V (D-S) MOSFET with Schottky Diode
|
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