Technical parameters/dissipated power: 1.1 W
Technical parameters/rise time: 10 ns
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 功能相似 | SOIC |
MOSFET DUAL N-CH 30V 5.7A 8-SOIC
|
||
SI4830ADY-T1-GE3
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Vishay Semiconductor | 功能相似 |
MOSFET DUAL N-CH 30V 5.7A 8-SOIC
|
|||
SI4830CDY-T1-GE3
|
Vishay Intertechnology | 功能相似 | SOIC |
MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 5.7A; SO-8; PD 1.1W; VGS +/-20V; gFS 1
|
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