Technical parameters/drain source resistance: 19.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/rise time: 12 ns
Technical parameters/descent time: 30 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
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