Technical parameters/drain source resistance: 53.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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Vishay Intertechnology | 功能相似 |
双P沟道增强型MOSFET Dual P-Channel Enhancement Mode MOSFET
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