Technical parameters/drain source resistance: 3.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.60 W
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/leakage source breakdown voltage: 12.0 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 25.0 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Compliant with standards/RoHS standards: Non-Compliant
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