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Model SI3430DV-T1
Description Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
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Brand: Vishay Siliconix
Packaging TSOP
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9896) Minimum order quantity(1)
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Technical parameters/drain source resistance: 170 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.14 W

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 2.40 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TSOP

External dimensions/packaging: TSOP

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI3430DV-T1-E3 SI3430DV-T1-E3 Vishay Intertechnology 功能相似
MOSFET N-CH 100V 1.8A 6-TSOP
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SI3430DV-T1-E3 SI3430DV-T1-E3 VISHAY 功能相似 TSOP-6
MOSFET N-CH 100V 1.8A 6-TSOP
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SI3430DV-T1-GE3 SI3430DV-T1-GE3 Vishay Semiconductor 功能相似 TSOP-6
Trans MOSFET N-CH 100V 1.8A 6Pin TSOP T/R
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