Technical parameters/drain source resistance: 100 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.14 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -2.70 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP
External dimensions/packaging: TSOP
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3455ADV-T1-E3
|
VISHAY | 功能相似 | TSOP-6 |
MOSFET P-CH 30V 2.7A 6-TSOP
|
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