Technical parameters/drain source resistance: 85.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -3.50 A to 3.50 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSSOP
External dimensions/packaging: TSSOP
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6544BDQ-T1-E3
|
Vishay Intertechnology | 功能相似 | TSSOP-8 |
MOSFET N/P-CH 30V 3.7A 8-TSSOP
|
||
SI6544BDQ-T1-E3
|
Vishay Siliconix | 功能相似 | TSSOP-8 |
MOSFET N/P-CH 30V 3.7A 8-TSSOP
|
||
SI6544BDQ-T1-E3
|
Vishay Semiconductor | 功能相似 | TSSOP |
MOSFET N/P-CH 30V 3.7A 8-TSSOP
|
||
SI6993DQ-T1-E3
|
Vishay Siliconix | 功能相似 | TSSOP-8 |
MOSFET P-CH DUAL 30V 3.6A 8TSSOP
|
||
|
|
Vishay Intertechnology | 功能相似 | TSSOP-8 |
MOSFET P-CH DUAL 30V 3.6A 8TSSOP
|
||
|
|
Vishay Semiconductor | 功能相似 |
MOSFET P-CH D-S 30V 8-TSSOP
|
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