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Model SI9802DY
Description Dual N-Channel Reduced Qg/ Fast Switching MOSFET
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Brand: Vishay Siliconix
Packaging SO
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2612) Minimum order quantity(1)
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Technical parameters/drain source resistance: 55.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.00 W

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): -4.50 A to 4.50 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI9926BDY-E3 SI9926BDY-E3 Vishay Siliconix 功能相似 SO-8
MOSFET NCh Dual MOSFET 2.5V
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