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Model 7MBP25RA-120-55
Description IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
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Brand: FUJI
Packaging P 610
Delivery time
Packaging method
Standard packaging quantity 1
1031.53  yuan 1031.53yuan
1+:
$ 1134.6874
10+:
$ 1124.3721
25+:
$ 1119.2144
50+:
$ 1114.0567
100+:
$ 1108.8991
150+:
$ 1103.7414
250+:
$ 1098.5837
500+:
$ 1093.4260
Quantity
1+
10+
25+
50+
100+
Price
$1134.6874
$1124.3721
$1119.2144
$1114.0567
$1108.8991
Price $ 1134.6874 $ 1124.3721 $ 1119.2144 $ 1114.0567 $ 1108.8991
Start batch production 1+ 10+ 25+ 50+ 100+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3556) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 198 W

Technical parameters/operating temperature (Max): 100 ℃

Technical parameters/operating temperature (Min): -20 ℃

Technical parameters/dissipated power (Max): 198 W

Package parameters/number of pins: 22

Encapsulation parameters/Encapsulation: P 610

External dimensions/length: 109 mm

External dimensions/width: 88 mm

External dimensions/height: 22 mm

External dimensions/packaging: P 610

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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