Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 800 V
Technical parameters/maximum allowable collector current: 12A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
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BU2527AF
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NXP | 功能相似 | TO-247 |
Silicon Diffused Power Transistor
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MJW16212
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Motorola | 功能相似 |
Trans GP BJT NPN 650V 10A 3Pin(3+Tab) TO-247AE
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