Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 900mV @10mA
Technical parameters/dissipated power: 0.25 W
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 10 V
Technical parameters/forward voltage (Max): 900mV @10mA
Technical parameters/rated power (Max): 250 mW
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Physical parameters/temperature coefficient: 6.4 mV/K
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX84-C10,215
|
NXP | 类似代替 | SOT-23-3 |
NXP BZX84-C10,215. 齐纳二极管, 250mW, 10V, SOT-23
|
||
BZX84-C11,215
|
NXP | 类似代替 | SOT-23-3 |
Nexperia BZX84-C11,215 单路 齐纳二极管, 11V 5% 250 mW, 3引脚 SOT-23 (TO-236AB)封装
|
||
BZX84-C11,215
|
Nexperia | 类似代替 | SOT-23-3 |
Nexperia BZX84-C11,215 单路 齐纳二极管, 11V 5% 250 mW, 3引脚 SOT-23 (TO-236AB)封装
|
||
MMBZ5240BLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBZ5240BLT1G 单管二极管 齐纳, 10 V, 225 mW, SOT-23, 5 %, 3 引脚, 150 °C
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review