Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJN3306R
|
Rochester | 功能相似 | TO-92 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
||
FJN3314R
|
Fairchild | 功能相似 | TO-92 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
||
KSR1006TA
|
Fairchild | 功能相似 | TO-92 |
TO-92 NPN 50V 100mA
|
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