Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 31.0 A
Technical parameters/polarity: N-CH
Technical parameters/input capacitance: 4.67 nF
Technical parameters/gate charge: 160 nC
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Continuous drain current (Ids): 31.0 A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 4670pF @25V(Vds)
Technical parameters/descent time: 4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 565000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: T-MAX-3
External dimensions/packaging: T-MAX-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
APT8024B2LLG
|
Microsemi | 类似代替 | TO-247-3 |
N沟道 800V 31A
|
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