Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/maximum allowable collector current: 1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6422
|
Central Semiconductor | 功能相似 | TO-66 |
Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,
|
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