Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 50A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
HITACHI | 功能相似 | TO-220 |
Silicon N-Channel MOS FET
|
||
MTP50N06VL
|
ON Semiconductor | 功能相似 | CASE 221A-09 |
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032Ω
|
||
STP45NE06L
|
ST Microelectronics | 功能相似 | TO-220 |
N - CHANNEL 60V - 0.022ohm - 45A - TO- 220 / TO- 220FP的STripFET功率MOSFET N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFET POWER MOSFET
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