Technical parameters/drain source resistance: 27.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.10 W
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 6.80 A
Encapsulation parameters/Encapsulation: SOT-163
External dimensions/packaging: SOT-163
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review