Technical parameters/rise/fall time: 20ns, 24ns
Technical parameters/number of output interfaces: 1
Technical parameters/descent time (Max): 75 ns
Technical parameters/rise time (Max): 75 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 960 mW
Technical parameters/power supply voltage: 4.5V ~ 18V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PDIP-8
External dimensions/packaging: PDIP-8
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MIC4422YN
|
Micrel | 完全替代 | DIP-8 |
MIC4422 系列 1.5 Ohm 9 A峰值 低压侧 MOSFET 驱动器 - DIP-8
|
||
MIC4422YN
|
Microchip | 完全替代 | PDIP-8 |
MIC4422 系列 1.5 Ohm 9 A峰值 低压侧 MOSFET 驱动器 - DIP-8
|
||
MIC4429YM
|
Microchip | 类似代替 | SOIC-8 |
MICROCHIP MIC4429YM 芯片, 驱动器, 场效应管, MOSFET, 反相, 低压侧, 6A, 8SOIC
|
||
MIC4429YM
|
Micrel | 类似代替 | SOIC-8 |
MICROCHIP MIC4429YM 芯片, 驱动器, 场效应管, MOSFET, 反相, 低压侧, 6A, 8SOIC
|
||
MIC4452YM
|
Microchip | 类似代替 | SOIC-8 |
MICROCHIP MIC4452YM 芯片, 驱动器, 场效应管, MOSFET, 12A, 低压侧
|
||
MIC4452YM
|
Micrel | 类似代替 | SOIC-8 |
MICROCHIP MIC4452YM 芯片, 驱动器, 场效应管, MOSFET, 12A, 低压侧
|
||
MIC4452YN
|
Micrel | 类似代替 | DIP-8 |
MICROCHIP MIC4452YN 芯片, 驱动器, 场效应管, MOSFET, 12A峰值, 低压侧
|
||
MIC4452YN
|
Microchip | 类似代替 | PDIP-8 |
MICROCHIP MIC4452YN 芯片, 驱动器, 场效应管, MOSFET, 12A峰值, 低压侧
|
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