Technical parameters/forward voltage: 0.66 V
Technical parameters/Maximum reverse voltage (Vrrm): 45 V
Technical parameters/forward current: 16 A
Technical parameters/Maximum forward surge current (Ifsm): 150 A
Technical parameters/forward current (Max): 16 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-220-2
External dimensions/packaging: TO-220-2
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
645H
|
AVAGO Technologies | 功能相似 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2
|
|||
645H
|
Agilent | 功能相似 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2
|
|||
MBRF16H45-E3/45
|
Vishay Semiconductor | 完全替代 | TO-220-2 |
肖特基势垒整流器 Schottky Barrier Rectifier
|
||
MBRF16H45-E3/45
|
VISHAY | 完全替代 | TO-220-2 |
肖特基势垒整流器 Schottky Barrier Rectifier
|
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