Technical parameters/forward voltage: 0.88 V
Technical parameters/thermal resistance: 2℃/W (RθJC)
Technical parameters/forward current: 10 A
Technical parameters/Maximum forward surge current (Ifsm): 250 A
Technical parameters/forward current (Max): 10 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.54 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.32 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBR20100CT-E3/4W
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
TMBS - Trench MOS 势垒肖特基整流器，高达 20A，Vishay Semiconductor Vishay 的 Trench MOS 势垒肖特基 (TMBS) 整流器系列包含专利 Trench 结构。 与平面肖特基整流器相比，TMBS 整流器可提供多个优势。 工作电压为 45V 及更高时平面肖特基整流器就失去了其快速转换速度的优势，且低正向压降到极度程度。 专利型 TMBS 结构通过少量缩减向漂移区域的载体注入来解决这些问题，从而最大程度减少积累电荷并提高转换速度。 ### 特点 专利 Trench 结构 提高交流/直流开关模式电源和直流/直流转换器的效率 高功率密度和低正向电压 ### 肖特基整流器，Vishay Semiconductor
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