Technical parameters/rated voltage (DC): 7.00 V
Technical parameters/rated current: 90.0 mA
Technical parameters/dissipated power: 120 mW
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 120 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSSOP-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: TSSOP-6
Physical parameters/operating temperature: -55℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBD110DWT1
|
ON Semiconductor | 功能相似 | SOT-363 |
双肖特基势垒二极管 Dual Schottky Barrier Diodes
|
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