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Technical parameters/rise/fall time: 17ns, 12ns
Technical parameters/number of output interfaces: 2
Technical parameters/output current: 4.5 A
Technical parameters/dissipated power: 720 mW
Technical parameters/Static current: 540 µA
Technical parameters/rise time: 17 ns
Technical parameters/descent time: 14 ns
Technical parameters/descent time (Max): 14 ns
Technical parameters/rise time (Max): 17 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 720 mW
Technical parameters/power supply voltage: 4V ~ 6.85V
Technical parameters/power supply voltage (Max): 6.85 V
Technical parameters/power supply voltage (Min): 4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.45 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LM27222M
|
TI | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS LM27222M 芯片, 双路MOSFET驱动器, SOP, 8针, 塑料
|
||
LM27222M/NOPB
|
National Semiconductor | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LM27222M/NOPB 驱动器, MOSFET/PWM控制器, 高压侧和低压侧, 4V-7V电源, 4.5A输出, SOIC-8
|
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