Technical parameters/frequency: 200 MHz
Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 600 mA
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 650 mW
Technical parameters/collector breakdown voltage: 60.0 V (min)
Technical parameters/breakdown voltage (collector emitter): 40.0V (min)
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1900 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412900951
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