Encapsulation parameters/Encapsulation: ECH-8
External dimensions/packaging: ECH-8
Other/maximum source drain voltage VdsDrain Source Voltage: 20V
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 12V
Other/Maximum Drain Current IdDrain Current: 7A
Other/source drain on resistance RdsDrain Source On State Resistance: 35mΩ@ VGS = 2.5V, ID = 2A
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 0.5~1.3V
Other/dissipative power PdPower Dissipation: 1.4W
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Sanyo Semiconductor | 功能相似 |
N-Channel Power MOSFET, 24V, 8A, 23mOhm, Dual ECH8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review