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Model SIHB33N60E-GE3
Description VISHAY SIHB33N60E-GE3 Field effect transistor, MOSFET, N-channel, 600V, 33A, TO-263-3
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
19.18  yuan 19.18yuan
5+:
$ 22.4453
50+:
$ 21.4861
200+:
$ 20.9489
500+:
$ 20.8146
1000+:
$ 20.6804
2500+:
$ 20.5269
5000+:
$ 20.4310
7500+:
$ 20.3350
Quantity
5+
50+
200+
500+
1000+
Price
$22.4453
$21.4861
$20.9489
$20.8146
$20.6804
Price $ 22.4453 $ 21.4861 $ 20.9489 $ 20.8146 $ 20.6804
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2299) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.083 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 278 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Input capacitance (Ciss): 3508pF @100V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 278 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Industrial, Lighting, Alternative Energy, Motor Drive & Control, Portable Devices, Computers & Computer Peripherals, Communications & Networking, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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