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Model KSD526Y
Description KSD526: NPNEpitaxial silicon transistor
Product QR code
Brand: ON Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Bag
Standard packaging quantity 1
4.09  yuan 4.09yuan
5+:
$ 5.5256
25+:
$ 5.1163
50+:
$ 4.8297
100+:
$ 4.7070
500+:
$ 4.6251
2500+:
$ 4.5228
5000+:
$ 4.4818
10000+:
$ 4.4204
Quantity
5+
25+
50+
100+
500+
Price
$5.5256
$5.1163
$4.8297
$4.7070
$4.6251
Price $ 5.5256 $ 5.1163 $ 4.8297 $ 4.7070 $ 4.6251
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8979) Minimum order quantity(5)
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Technical parameters/frequency: 8 MHz

Technical parameters/dissipated power: 30 W

Technical parameters/breakdown voltage (collector emitter): 80 V

Technical parameters/minimum current amplification factor (hFE): 120 @500mA, 5V

Technical parameters/rated power (Max): 30 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 30000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Bag

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
KSD526Y KSD526Y ON Semiconductor 类似代替 TO-220-3
NPN外延硅晶体管功率放大器的应用 NPN Epitaxial Silicon Transistor Power Amplifier Applications
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