Technical parameters/dissipated power: 50000 mW
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/minimum current amplification factor (hFE): 4 @1A, 1V
Technical parameters/rated power (Max): 50 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 50000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | SFM |
NPN(集电极发射极结二极管) 600V 2A
|
||
KSC5502DTTU
|
Fairchild | 功能相似 | TO-220-3 |
NPN(集电极发射极结二极管) 600V 2A
|
||
KSC5502DTTU
|
ON Semiconductor | 功能相似 | TO-220-3 |
NPN(集电极发射极结二极管) 600V 2A
|
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