Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/minimum current amplification factor (hFE): 9 @500mA, 2V
Technical parameters/rated power (Max): 20 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 20 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 8.3 mm
External dimensions/width: 3.45 mm
External dimensions/height: 11.2 mm
External dimensions/packaging: TO-126-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ST13003N
|
ST Microelectronics | 功能相似 | TO-126-3 |
高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
|
||
STT13005D-K
|
ST Microelectronics | 功能相似 | TO-126-3 |
高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
|
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