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Description High voltage NPN transistors, Fairchild Semiconductor # # bipolar transistors, and Fairchild Semiconductor bipolar junction transistor (BJT) board series provide complete solutions to meet various circuit application needs. Innovative packaging design is used to provide the smallest size, highest reliability, and maximum thermal performance.
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Packaging TO-126-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
147.25  yuan 147.25yuan
1+:
$ 169.3375
10+:
$ 164.9200
50+:
$ 161.5333
100+:
$ 160.3553
200+:
$ 159.4718
500+:
$ 158.2938
1000+:
$ 157.5575
2000+:
$ 156.8213
Quantity
1+
10+
50+
100+
200+
Price
$169.3375
$164.9200
$161.5333
$160.3553
$159.4718
Price $ 169.3375 $ 164.9200 $ 161.5333 $ 160.3553 $ 159.4718
Start batch production 1+ 10+ 50+ 100+ 200+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(8812) Minimum order quantity(1)
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Technical parameters/breakdown voltage (collector emitter): 400 V

Technical parameters/minimum current amplification factor (hFE): 9 @500mA, 2V

Technical parameters/rated power (Max): 20 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 20 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-126-3

External dimensions/length: 8.3 mm

External dimensions/width: 3.45 mm

External dimensions/height: 11.2 mm

External dimensions/packaging: TO-126-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
ST13003N ST13003N ST Microelectronics 功能相似 TO-126-3
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STT13005D-K STT13005D-K ST Microelectronics 功能相似 TO-126-3
高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
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